| Part Number | C4554 |
| Manufacturer | NEC |
| Title | 2SC4554 |
| Description | of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation an... |
| Features |
large current switching at a low power dissipation. In addition, a high hFE enables alleviation of the driver load.
FEATURES
• High hFE and low VCE(sat): hFE ≅ 800 (VCE = 2 V, IC = 5 A) VCE(sat) ≅ 0.12 V (IC = 5 A, IB = 0.05 A) • On-chip C to E damper diode • Mold package that does not require an i... |
| File Size | 145.76KB |
| Datasheet |
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C4559 : Power Transistors 2SC4559 Silicon NPN triple diffusion planar type 4.2±0.2 16.7±0.3 7.5±0.2 0.7±0.1 For high breakdown voltage high-speed switching ■ Features 10.0±0.2 5.5±0.2 Unit: mm 4.2±0.2 2.7±0.2 • High-speed switching • High collector-emitter voltage (Base open) VCEO φ 3.1±0.1 • Full-pack package which can be installed to the heat sink with one screw 1.4±0.1 1.3±0.2 / ■ Absolute Maximum Ratings TC = 25°C 14.0±0.5 Solder Dip (4.0) 0.8±0.1 0.5+–00..12 Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 500 V c type Collector-emitter voltage (E-B short) VCES 500 V n d tage. ued Collector-emitter voltage (Base open) VCEO 400 V le s ontin .
C4558C : www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com .
C4558 : www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ .
C4557C : www.DataSheet4U.com ********** —TOP VIEW— VCC (+15V) – UPC4557C IL00 OPERATIONAL AMPLIFIER (WIDE BAND, LOW NOISE) 1 2 3 4 VEE (–15V) 8 7 + + – 6 5 www.DataSheet.in .
C4557 : www.DataSheet4U.com 2SC4557 Application : Switching Regulator and General Purpose (Ta=25°C) 2SC4557 100max 100max 550min 10 to 28 0.5max 1.2max 6typ 105typ V V 16.2 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4557 900 550 7 10(Pulse20) 5 80(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=5A IC=5A, IB=1A IC=5A, IB=1A VCE=12V, IE=–1A VCB=10V, f=1MHz External Dimensions FM100(TO3PF) 0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6 Unit µA 23.0±0.