2SC5819
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5819
High-Speed Switching Applications DC-DC Converter Applications
Industrial Applications Unit: mm
• High DC current gain: hFE = 400 to 1000 (IC = 0.
15 A) • Low collector-emitter saturation
voltage: VCE (sat) = 0.
12 V (max) • High-speed switching: tf = 45 ns (typ.
)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base
voltage
Collector-emitter
voltage
Collector-emitter
voltage
Emitter-base
voltage
Collector current
DC Pulse
Base current
Collector power dissipation
t = 10 s DC
Junction temperature
Storage temperature range
VCBO
40
V
VCEX
30
V
VCEO
20
V
VEBO
7
V
IC
1.
5
...