CEA6861
P-Channel Enhancement Mode Field Effect Transistor FEATURES
-60V, -2.
4A, RDS(ON) = 135mΩ @VGS = -10V.
RDS(ON) = 180mΩ @VGS = -4.
5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
SOT-89 package.
D
D S D G SOT-89
G
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source
Voltage Gate-Source
Voltage Drain Current-Continuous Drain Current-Pulsed
a
TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit -60 Units V V A A W C
±20
-2.
4 -10 1.
25 -55 to 150
Maximum Power Dissipation Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 100 Unit...