CEC3833
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
30V, 17A, RDS(ON) = 5.
0mΩ @VGS = 10V.
RDS(ON) = 7.
2mΩ @VGS = 4.
5V.
Super High dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
D
G S
5 67 8 Bottom View
DFN3*3
4 321
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source
Voltage Gate-Source
Voltage
VDS 30
VGS ±20
Drain Current-Continuous Drain Current-Pulsed a
ID 17 IDM 68
Maximum Power Dissipation
PD 2.
5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units V V A A
W
C
Thermal Characteristics
Parameter Thermal Resistance...