CED1710/CEU1710
N-Channel Enhancement Mode Field Effect Transistor FEATURES
100V, 17A, RDS(ON) = 85mΩ @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D PRELIMINARY
G
D G S CEU SERIES TO-252(D-PAK)
G D
S CED SERIES TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source
Voltage Gate-Source
Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 100
Units V V A A W W/ C C
±20
17 68 50 0.
4 -55 to 150
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Ra...