CED6060R/CEU6060R
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 30A, RDS(ON) = 25mΩ @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source
Voltage Gate-Source
Voltage
VDS 60
VGS ±20
Drain Current-Continuous Drain Current-Pulsed a
ID 30 IDM 120
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
PD
50 0.
34
Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating ...