N-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 55A, RDS(ON) = 11mΩ @VGS = 10V.
RDS(ON) = 14mΩ @VGS = 4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
CED63A3/CEU63A3
D
D G S CEU SERIES TO-252(D-PAK)
G D
G
S CED SERIES TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source
Voltage Gate-Source
Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 30
Units V V A A W W/ C C
±20
55 150 57 0.
45 -55 to 150
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and St...