CED84A4/CEU84A4
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
40V, 80A, RDS(ON) = 5.
1mΩ @VGS = 10V.
RDS(ON) = 7.
8mΩ @VGS = 4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
D S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source
Voltage Gate-Source
Voltage Drain Current-Continuous @ TC = 25 C
@ TC = 100 C
VDS VGS
ID
40
±20
80
56
Drain Current-Pulsed a
IDM 320
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
PD
57.
7 0.
38
Operating and Stor...