N-Channel MOSFET
CEF06N5 Oct. 2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 500V , 4.5A , RDS(ON)=1Ω @VGS=10V. 6 Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F full-pak for through hole G D G D S TO-220F S ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Sym...
CET