CEF10N6S
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type CEF10N6S
VDSS 600V
RDS(ON) 0.
75Ω
ID 10A d
@VGS 10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D
G
D S CEF SERIES
TO-220F
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Drain-Source
Voltage Gate-Source
Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C Operating and Store Temperature Range
Symbol
VDS VGS ID IDM e
PD
TJ,Tstg
Limit
600
±30
10d 40 d 50 0.
4 -55 to 150
Thermal Characteristics
Parameter Thermal Resistance,...