CEP655N/CEB655N CEI655N/CEF655N
N-Channel Enhancement Mode Field Effect Transistor FEATURES
Type CEP655N CEB655N CEI655N CEF655N VDSS 150V 150V 150V 150V RDS(ON) 0.
153Ω 0.
153Ω 0.
153Ω 0.
153Ω ID 15A 15A 15A 15A
d
PRELIMINARY
@VGS 10V 10V 10V 10V D
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
D
G
S CEB SERIES TO-263(DD-PAK)
G
G D S
CEI SERIES TO-262(I2-PAK)
G D S
CEP SERIES TO-220
G
D S
CEF SERIES TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source
Voltage Gate-Source
Voltage Drain Current-Continuous Drain Current-Pulsed
a
...