CEP730G/CEB730G
CEF730G
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type CEP730G CEB730G
VDSS 400V 400V
CEF730G
400V
RDS(ON) 1Ω 1Ω 1Ω
ID 5.
5A 5.
5A 5.
5A e
@VGS 10V 10V 10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D
G
D
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source
Voltage Gate-Source
Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS 400
VG...