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N-Channel Enhancement Mode Field Effect Transistor FEATURES
650V, 0.
35A, RDS(ON) = 10.
5 Ω @VGS = 10V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
TO-92(Bulk) & TO-92(Ammopack) package.
CEK01N65
PRELIMINARY
D
G
G D G
S
D
TO-92(Ammopack)
S
TO-92(Bulk)
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source
Voltage Gate-Source
Voltage Drain Current-Continuous Drain Current-Pulsed
a
TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 650 Units V V A A W C
±30
0.
35 1.
4 3.
1 -55 to 150
Maximum Power Dissipation Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Res...