CEM4269
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
FEATURES
40V, 6.
1A, RDS(ON) = 32mΩ @VGS = 10V.
RDS(ON) = 46mΩ @VGS = 4.
5V.
-40V, -5.
2A, RDS(ON) = 43mΩ @VGS = 10V.
RDS(ON) = 65mΩ @VGS = 4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
SO-8 1
1 S1 2 G1 3 S2 4 G2 D1 8 D1 7 D2 6 D2 5
5
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source
Voltage Gate-Source
Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation TA=25 C TA=70 C Operating and Store Temperature Range TA=25 C TA=70 C
TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD T...