Dual Enhancement Mode Field Effect Transistor (N and P Channel)
CEM4279
5
FEATURES
40V, 6.
1A, RDS(ON) = 32mΩ @VGS = 10V.
RDS(ON) = 46mΩ @VGS = 4.
5V.
-40V, -4.
3A, RDS(ON) = 66mΩ @VGS = -10V.
RDS(ON) = 105mΩ @VGS = -4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
SO-8
D1 8 D1 7 D2 6 D2 5
1
1 S1
2 G1
3 S2
4 G2
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source
Voltage Gate-Source
Voltage Drain Current-Continuous Drain Current-Pulsed
a
TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg N-Channel 40 P-Channel -40 Units V V A A W C
±20
6.
1 24 2.
0 -55 to 150
±20
-4.
3...