CEM4948
Dual P-Channel Enhancement Mode Field Effect Transistor FEATURES
-60V, -3.
1A, RDS(ON) = 120mΩ @VGS = -10V.
RDS(ON) = 150mΩ @VGS = -4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
D1 8 D1 7 D2 6 D2 5
5
SO-8 1
1 S1
2 G1
3 S2
4 G2
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source
Voltage Gate-Source
Voltage Drain Current-Continuous Drain Current-Pulsed
a
TA = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg -60
Units V V A A W C
±20
-3.
1 -20 2.
0 -55 to 150
Maximum Power Dissipation Operating and Store Temperature Range
Thermal Characteristics
Paramet...