CEM7350
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
FEATURES
100V, 2.
6A, RDS(ON) = 190mΩ @VGS = 10V.
-100V, -2.
0A, RDS(ON) = 320mΩ @VGS = -10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
D1 D1 7 D2 6 D2 5
Lead free product is acquired.
Surface mount Package.
8
SO-8 1
1 S1
2 G1
3 S2
4 G2
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source
Voltage Gate-Source
Voltage Drain Current-Continuous Drain Current-Pulsed
a
TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg N-Channel 100 P-Channel -100 Units V V A A W C
±20
2.
6 10 2.
0 -55 to 150
±20
-2.
0 -8.
0
Maximum Power Dissipation Operating and Store ...