CEN7002A
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 0.
25A, RDS(ON) = 3 Ω @VGS = 10V.
RDS(ON) = 4 Ω @VGS = 4.
5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
SOT-23-T package.
D
CEN7002A SOT-23-T
Die upside up package.
DS G
SOT-23-T
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source
Voltage Gate-Source
Voltage Drain Current-Continuous Drain Current-Pulsed a
VDS 60
VGS ±20
ID 0.
25 IDM 1.
3
Maximum Power Dissipation
PD 0.
35
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units V V A A
W
C
Thermal Characteristics
Parameter Thermal Resistance, Ju...