N-Channel Enhancement Mode Field Effect Transistor FEATURES
25V, 69A, RDS(ON) = 9mΩ @VGS = 10V.
RDS(ON) = 13mΩ @VGS = 4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-263 & TO-220 package.
CEP75A3/CEB75A3
D
G
CEB SERIES TO-263(DD-PAK)
CEP SERIES TO-220
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source
Voltage Gate-Source
Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 25
Units V V A A W W/ C C
±20
69 276 68 0.
45 -55 to 175
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Ra...