CED6186/CEU6186
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 28A, RDS(ON) = 25mΩ @VGS = 10V.
RDS(ON) = 32mΩ @VGS = 4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source
Voltage Gate-Source
Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM
PD
60
±20
28 112 38 0.
25
Operating and Store Temperature Range
TJ,Tstg
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