Part Number
|
CGHV40050 |
Manufacturer
|
Cree |
Description
|
GaN HEMT |
Published
|
Mar 31, 2016 |
Detailed Description
|
CGHV40050
50 W, DC - 4.0 GHz, 50 V, GaN HEMT
Cree’s CGHV40050 is an unmatched, gallium nitride (GaN) high electron
mob...
|
Datasheet
|
CGHV40050
|
Overview
CGHV40050
50 W, DC - 4.
0 GHz, 50 V, GaN HEMT
Cree’s CGHV40050 is an unmatched, gallium nitride (GaN) high electron
mobility transistor (HEMT).
The CGHV40050, operating from a 50 volt
rail, offers a general purpose, broadband solution to a variety of RF and
microwave applications up to 4 GHz.
The reference HPA design in the
datasheet operates from 800 MHz to 2 GHz operation instantaneously.
It is a demonstration amplifier to showcase the CGHV40050’s high
efficiency, high gain and wide bandwidth capabilities.
The device can be used for a range of applications from narrow band UHF, L and S Band as
PPNac: CkaGgHeVT4y0p0e5s0: F44&0C19G3H&V4404005200P6
well as multi-octave bandwidth ampli...
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