|
Part Number
|
CGHV40100 |
|
Manufacturer
|
Cree |
|
Description
|
GaN HEMT |
|
Published
|
Dec 18, 2019 |
|
Detailed Description
|
CGHV40100
100 W, DC - 3.0 GHz, 50 V, GaN HEMT
Cree’s CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobi...
|
|
Datasheet
|
CGHV40100
|
Overview
CGHV40100
100 W, DC - 3.
0 GHz, 50 V, GaN HEMT
Cree’s CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).
The CGHV40100, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.
GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGHV40100 ideal for linear and compressed amplifier circuits.
The transistor is available in a 2-lead flange and pill package.
PPNac: CkaGgHeVT4y0p1e0s0: F44&0C19G3H&V4404100200P6
Typical Performance Over 500 MHz - 2.
5 GHz (TC = 25˚C), 50 V
Parameter
500 MHz
1.
0 GHz
1.
5 GHz
Small Signal Gain
17.
6
16.
9
17.
7
Saturated Out...
Similar Datasheet