JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD
DFNWB5×2-6L-A Plastic-Encapsulate
MOSFETS
CJND2007
V(BR)DSS
20V
Dual N-Channel
MOSFET
RDS(on)MAX
20mΩ@10V 22mΩ @4.
5V 24 mΩ@3.
8V 26mΩ@2.
5V 35mΩ@1.
8V
ID
7A
DFNWB5×2-6L-A
DESCRIPTION The CJND2007 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge.
It is ESD protected.
This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration.
MARKING:
Equivalent Circuit
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source
Voltage
Gate-Source
Voltage
Continuous Drain Current
Pulsed Drain Current
Thermal Resistance from Junct...