CL616BA
N-Channel Enhancement Mode
MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 6.
9mΩ @VGS = 10V
ID 50A
PDFN 5X 6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source
Voltage
VDS 30
Gate-Source
Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
50 31.
5 120
Continuous Drain Current
TA = 25 °C TA = 70 °C
ID
13 10.
5
Avalanche Current
IAS 24
Avalanche Energy
L =0.
1mH
EAS
28.
5
Power Dissipation
TC = 25 °C TC = 100 °C
PD
31 12.
5
Power Dissipation
TA = 25 °C TA = 70 °C
PD
2.
2 1.
4
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V V
A...