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SOT-23 Formed SMD Package
CMBT2369
SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR
N–P N transistor
Marking CMBT2369 = lJ
PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m
Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS Collector–base
voltage (open emitter) Collector–emitter
voltage (VBE = 0) Collector–emitter
voltage (open base) Collector current (d.
c.
value) Total power dissipation up to Tamb = 25 °C D.
C.
current gain IC = 10mA; VCE = 1 V IC = 100 mA; VCE = 2 V Storage time ICon = IBon = IBoff = 10 mA
VCB0 VCES VCE0 IC Ptot hFE hFE ts
max.
...