CMS-S060-040
SCHOTTKY BARRIER DIODE
Features :
* Extremely low forward volts * Guard ring protection * Low reverse leakage current
Chip size(A):
1.
524* 1.
524 mm
2
Bond Pad size(B) :
1.
422 *1.
422 mm
2
A
Thickness : 300µm ± 20µm
Metalization :
Anode Ti/Ni/Ag
B
Metalization :
Cathode Ti/Ni/Ag
Electrical Characteristics
Sym.
Spec.
Limit
Unit
Maximum Instantaneous Forward Volt ° at IF : 3.
0Amp.
25 C
com
VF max
0.
48
Volt
Minimum Instantaneous Reverse
Voltage ° at IR : 300 uA 25 C
VR min.
43
Volt.
Minimum Non-repetitive Peak Surge current at 25 C
°
IFSM
80
Amp
Storage Temperature
TSTG
-65 to +125
°
C
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