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PROCESS
Small Signal Transistor
CP221
Central
TM
NPN- High
Voltage Darlington Transistor Chip
Semiconductor Corp.
PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 7,290 PRINCIPAL DEVICE TYPES CZT2000 EPITAXIAL BASE 39.
5 X 39.
5 MILS 9.
8 MILS 3.
9 x 5.
1 MILS 7.
9 x 3.
9 MILS Al - 24,000Å Au - 12,000Å
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R1 (1-August 2002)
www.
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Central
TM
PROCESS
CP221
Semiconductor Corp.
Typical Electrical Characteristics
145...