PROCESS
Small Signal
MOSFET
CP361R
N-Channel Enhancement-Mode
MOSFET Chip
PROCESS DETAILS Die Size Die Thickness Gate Bonding Pad Area Source Bonding Pad Area Top Side Metalization Back Side Metalization 14.
2 x 14.
2 MILS 3.
9 MILS 3.
94 x 3.
94 MILS 3.
94 x 7.
08 MILS Al-Si - 30,000Å Au - 12,000Å
GEOMETRY GROSS DIE PER 6 INCH WAFER 123,000 PRINCIPAL DEVICE TYPES CEDM7001 CMNDM7001
R1 (2-September 2010)
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PROCESS
CP361R
Typical Electrical Characteristics
R1 (2-September 2010)
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