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Ordering number : ENA1905
CPH3355
SANYO Semiconductors
DATA SHEET
CPH3355
Features
• • •
P-Channel Silicon
MOSFET
General-Purpose Switching Device Applications
ON-resistance RDS(on)1=120mΩ(typ.
) 4V drive Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source
Voltage Gate-to-Source
Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.
8mm) Conditions Ratings --30 ±20 --2.
5 --10 1 150 --55 to +150 Unit V V A A W °C °C
Package Dimensions
unit : mm (typ) 7015...