CPH6314
Ordering number : ENN8236
CPH6314
Features
• Low ON-resistance.
• High-speed switching.
• 4V drive.
P-Channel Silicon
MOSFET
General-Purpose Switching Device Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source
Voltage Gate-to-Source
Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature
Symbol
VDSS VGSS
ID IDP PD Tch
Tstg
Conditions
PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1200mm2✕0.
8mm)
Ratings --30 ±20 --4 --16 1.
6 150
--55 to +150
Unit V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown
Voltage Zero-Gate
Voltage Drain Curren...