CPH6355
Power
MOSFET
–30V, 169mΩ, –3A, Single P-Channel
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onsemi.
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Features
• Low ON-Resistance • 4V Drive • Pb-Free, Halogen Free and RoHS Compliance
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Value
Unit
Drain to Source
Voltage
VDSS
−30 V
Gate to Source
Voltage
VGSS
±20 V
Drain Current (DC)
ID −3 A
Drain Current (Pulse) PW≤10μs, duty cycle≤1%
IDP −12 A
Power Dissipation When mounted on ceramic substrate (1500mm2 × 0.
8mm)
Junction Temperature
PD Tj
1.
6 W 150 °C
Storage Temperature
Tstg
−55 to +150
°C
This product is designed to “ESD immunity 200V*”, so please take care when handling.
* Machine Model
Thermal Resistance Ratings
Parame...