Silicon N-Channel Power
MOSFET
CS4N65 A3HDY
○R
General Description：
CS4N65 A3HDY, the silicon N-channel Enhanced VD
MOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD(TC=25℃) RDS(ON)Typ
650 4 75 2
performance and enhance the avalanche energy.
The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency.
The package form is TO-251,
which accords with the RoHS standard.
Features：
l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:14.
5nC) l Low Reverse transfer capacitances(Typical: 8.
5pF) l 100% Single Pulse avalanche energy Test
Applications：
...