Silicon N-Channel Power
MOSFET
CS730 A8RD
○R
General Description:
CS730 A8RD, the silicon N-channel Enhanced VD
MOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve
VDSS ID PD(TC=25℃) RDS(ON)Typ
400 6 75
0.
75
switching performance and enhance the avalanche energy.
The
transistor can be used in various power switching circuit for
system miniaturization and higher efficiency.
The package form
is TO-220AB, which accords with the RoHS standard.
Features:
l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:14.
5nC) l Low Reverse transfer capacitances(Typical:7.
5pF) l 100% Single Pulse avalanche energy Test
Applications:...