CT2300-R3 N-Channel Enhancement
MOSFET
Features
• Drain-Source Breakdown
Voltage VDSS 20 V • Drain-Source On-Resistance
RDS(ON) 22mΩ, at VGS= 4.
5V, IDS= 4.
0A RDS(ON) 27mΩ, at VGS= 2.
5V, IDS= 3.
0A
℃• Continuous Drain Current at TA=25 ID = 4.
0A
• Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free
Applications
• Power Management • Lithium Ion Battery
Description
The CT2300-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications .
Package Outline
Drain
Gate
Source
Schematic
Drain
Gate
Source
CT Micro Proprietary & Confidential
Page 1
Rev 2 Jun, 2015...