CT2323-R3 P-Channel Enhancement
MOSFET
Features
• Drain-Source Breakdown
Voltage VDSS - 20 V • Drain-Source On-Resistance
RDS(ON) 30mΩ, at VGS= - 4.
5V, IDS= - 4.
7A RDS(ON) 35mΩ, at VGS= - 2.
5V, IDS= - 4.
1A RDS(ON) 40mΩ, at VGS= - 1.
8V, IDS= - 2.
0A
℃• Continuous Drain Current at TA=25 ID = - 4.
2A
• Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free
Applications
• Power Management • Portable Equipment • Battery Powered System • DC/DC Converter
Package Outline
Description
The CT2323-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications .
Schematic
Drain
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