CT3A01-R3 N-Channel Enhancement
MOSFET
Features
• Drain-Source Breakdown
Voltage VDSS 20 V • Drain-Source On-Resistance
• RDS(ON) 55mΩ, at VGS= 4.
5V, ID=3.
2A RDS(ON) 65mΩ, at VGS= 2.
5V, ID= 2.
5A RDS(ON) 80mΩ, at VGS= 1.
8V, ID= 2.
0A
℃• Continuous Drain Current at TA=25 ID = 3.
2A
• Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free
Description
The CT3A01-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications.
Applications
• Power Management • Portable Equipment • Load switch
Package Outline
Schematic
Drain
Drain
Gate
Source
Gate
Source
CT Micro P...