CTH11055NS N-Channel Enhancement
MOSFET
Features
Drain-Source Breakdown
Voltage VDSS 55V Drain-Source On-Resistance
RDS(ON) 8m, at VGS= 10, ID= 59A
Continuous Drain Current at TC=25℃ID =110A Advanced high cell density Trench Technology RoHS Compliance & Halogen Free
Description
These Power
MOSFETs utilizes Advanced Trench Process Technology which comes with High Density Cell Design for Ultra Low RDS(ON).
The device exhibits rugged avalanche characteristics and guaranteed to withstand a stipulated level of energy in the breakdown mode.
Applications
Switching Applications Motor Drivers Relay Drivers
Package Outline
Schematic
Pin 1
CT Micro Proprietary & Confidential
Gat...