CTH3506NS-T52 N-Channel Enhancement
MOSFET
Features
Drain-Source Breakdown
Voltage VDSS 60V Drain-Source On-Resistance
RDS(ON) 17m, at VGS= 10V, ID= 30A
Continuous Drain Current at TC=25℃ID =35.
1A Advanced high cell density Trench Technology RoHS Compliance & Halogen Free
Description
The CTH3506NS-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low
voltage application.
Applications
DC/DC Converter Power Management CCFL inverter
Package Outline
Schematic
Drain
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