CTL0025NS-R3 N-Channel Enhancement
MOSFET
Features
• Drain-Source Breakdown
Voltage VDSS 50 V • Drain-Source On-Resistance
RDS(ON) 1.
3Ω, at VGS= 10V, ID= 0.
2A RDS(ON) 1.
4Ω, at VGS= 5V, ID= 0.
2A RDS(ON) 1.
6Ω, at VGS= 2.
5V, ID= 0.
2A
℃• Continuous Drain Current at TA=25 ID = 0.
2A
• Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free
Applications
• Switches
• Motor controls
• Converters
• Power supply circuits
Description
The CTL0025NS-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
Package Outline
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