CTL015NS10-R3 N-Channel Enhancement
MOSFET
Features
• Drain-Source Breakdown
Voltage VDSS 105 V • Drain-Source On-Resistance
RDS(ON) 230mΩ, at VGS= 10V, ID= 1.
5A RDS(ON) 275mΩ, at VGS= 4.
5V, ID= 1.
0A
℃• Continuous Drain Current at TA=25 ID =1.
5A
• Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free
Description
The CTL015NS10-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
Applications
• Power Management • LCD Display inverter • DC/DC Converter • Load Switch
Package Outline
Schematic
Drain
Drai...