CTL0262PS-R3 P-Channel Enhancement
MOSFET
Features
Drain-Source Breakdown
Voltage VDSS -20 V Drain-Source On-Resistance
RDS(ON) 76m, at VGS= -4.
5V, ID= -3.
4A RDS(ON) 97m, at VGS= -2.
5V, ID= -2.
4A RDS(ON) 140m, at VGS= -1.
8V, ID= -1.
7A
Continuous Drain Current at TC=25℃ID = -3.
4A Advanced high cell density Trench Technology RoHS Compliance & Halogen Free
Description
The CTL0262PS-R3 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low
voltage application such as cellular ph...