CTL0412ND N-Channel Enhancement
MOSFET
Features
Drain-Source Breakdown
Voltage VDSS 20 V Drain-Source On-Resistance
RDS(ON) 22m, at VGS= 4.
5V, ID= 4.
1A RDS(ON) 27m, at VGS= 2.
5V, ID= 3.
8A
Continuous Drain Current at TC=25℃ID = 4.
1A Advanced high cell density Trench Technology RoHS Compliance & Halogen Free
Description
The CTL0412ND uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications tions.
Applications
Power Management Lithium Ion Battery
Package Outline
Schematic
Pin 1
Pin 2
Gate 1
Source 2
Gate 2
Drain 1 Source 1 Drain 2
CT Micro Proprietary & Confident...