CTL0452NS N-Channel Enhancement
MOSFET
Features
Drain-Source Breakdown
Voltage VDSS 20 V Drain-Source On-Resistance
RDS(ON) 22m, at VGS= 4.
5V, IDS= 4.
5A RDS(ON) 27m, at VGS= 2.
5V, IDS= 4.
0A
Continuous Drain Current at TC=25℃ ID = 4.
5A Advanced high cell density Trench Technology RoHS Compliance & Halogen Free
Applications
Power Management Lithium Ion Battery
Description
The CTL0452NS uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications .
Package Outline
Pin 2
Pin 1
Pin 3
Schematic
Drain
GATE
Source
Gate: Drain: Source:
Pin 1 Pin2 Pin3
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