CY62256N

CY62256VN : CY62256VN 256K (32K x 8) Static RAM Features ■ Functional Description The CY62256VN[1] family is composed of two high performance CMOS static RAM’s organized as 32K words by 8 bits. Easy memory expansion is provided by an active LOW chip enable (CE) and active LOW output enable (OE) and tristate drivers. These devices have an automatic power down feature, reducing the power consumption by over 99% when deselected. An active LOW write enable signal (WE) controls the writing/reading operation of the memory. When CE and WE inputs are both LOW, data on the eight data input/output pins (I/O0 through I/O7) is written into the memory location addressed by the address present on the address pins (.

CY62256V : 1CY 622 56 V fax id: 1069 PRELIMINARY CY62256V 32K x 8 Static RAM Features • • • • • • • • 55, 70 ns access time CMOS for optimum speed/power Wide voltage range: 2.7V−3.6V Low active power (70 ns, LL version) — 108 mW (max.) Low standby power (70 ns, LL version) — 18 µW (max.) Easy memory expansion with CE and OE features TTL-compatible inputs and outputs Automatic power-down when deselected LOW output enable (OE) and three-state drivers. This device has an automatic power-down feature, reducing the power consumption by 98% when deselected. The CY62256V is in the standard 450-mil-wide (300-mil body width) SOIC, TSOP, and reverse TSOP packages. An active LOW write enable signal (WE) contr.

CY62256EV18 : CY62256EV18 MoBL® 256-Kbit (32 K × 8) Static RAM 256-Kbit (32 K × 8) Static RAM Features ■ Very high speed: 70 ns ■ Temperature ranges: ❐ Industrial: –40 °C to +85 °C ■ Wide voltage range: 1.65 V to 2.25 V ■ Pin compatible with CY62256N ■ Ultra low standby power ❐ Typical standby current: 1 µA ❐ Maximum standby current: 4 µA ■ Ultra low active power ❐ Typical active current: 1.3 mA at f = 1 MHz ■ Easy memory expansion with CE and OE features ■ Automatic power-down when deselected ■ Complementary metal oxide semiconductor (CMOS) for optimum speed and power ■ Offered in Pb-free 28-pin Narrow SOIC package Functional Description The CY62256EV18 is a high performance CMOS static RAM module orga.

CY62256 : CY62256 256K (32K x 8) Static RAM Features Functional Description [1] z Temperature Ranges The CY62256 is a high-performance CMOS static RAM -Commercial:0 to 70 organized as 32K words by 8 bits. Easy memory expansion is -Industrial: -40 to 85 provided by an active LOW output enable ( ) and active LOW -Automotive: -40 to 125 output enable ( ) and three-state drives. This device has an z High speed: 55ns and 70 ns automatic power-down feature, reducing the power consumption z Voltage range : 4.5V –5.5V operation z Low active power (70ns, LL version, Com’l and Ind’l) -275mW (max) z Low standby power (70ns,LL Version, Com’l and Ind’l) -28 µW (max.) by 99.9% when deselected. An ac.