Part Number
|
CY7C11761KV18 |
Manufacturer
|
Cypress Semiconductor |
Description
|
18-Mbit QDR II SRAM 4-Word Burst Architecture |
Published
|
Apr 15, 2011 |
Detailed Description
|
18-Mbit QDR II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
18-Mbit QDR® II+ SRAM 4-Word Burst Architecture ...
|
Datasheet
|
CY7C11761KV18
|
Overview
18-Mbit QDR II+ SRAM 4-Word Burst Architecture (2.
5 Cycle Read Latency)
18-Mbit QDR® II+ SRAM 4-Word Burst Architecture (2.
5 Cycle Read Latency)
CY7C11611KV18, CY7C11761KV18 CY7C11631KV18, CY7C11651KV18 ®
Features
■
Functional Description
The CY7C11611KV18, CY7C11761KV18, CY7C11631KV18, and CY7C11651KV18 are 1.
8V Synchronous Pipelined SRAMs, equipped with QDR II+ architecture.
Similar to QDR II architecture, QDR II+ architecture consists of two separate ports: the read port and the write port to access the memory array.
The read port has dedicated data outputs to support read operations and the write port has dedicated data inputs to support write operations.
QDR II+ architecture has sepa...
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