Part Number
|
CY7C1321KV18 |
Manufacturer
|
Cypress Semiconductor |
Description
|
18-Mbit DDR II SRAM Four-Word Burst Architecture |
Published
|
Mar 14, 2017 |
Detailed Description
|
CY7C1319KV18/CY7C1321KV18
18-Mbit DDR II SRAM Four-Word Burst Architecture
18-Mbit DDR II SRAM Four-Word Burst Architec...
|
Datasheet
|
CY7C1321KV18
|
Overview
CY7C1319KV18/CY7C1321KV18
18-Mbit DDR II SRAM Four-Word Burst Architecture
18-Mbit DDR II SRAM Four-Word Burst Architecture
Features
■ 18-Mbit density (1M × 18, 512K × 36) ■ 333-MHz clock for high bandwidth ■ Four-word burst for reducing address bus frequency ■ Double data rate (DDR) interfaces (data transferred at
666 MHz) at 333 MHz ■ Two input clocks (K and K) for precise DDR timing
❐ SRAM uses rising edges only ■ Two input clocks for output data (C and C) to minimize clock
skew and flight time mismatches ■ Echo clocks (CQ and CQ) simplify data capture in high speed
systems ■ Synchronous internally self-timed writes ■ DDR II operates with 1.
5 cycle read latency when DOFF is
asserted HIGH...
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