TetraFET D1019UK METAL GATE RF SILICON FET MECHANICAL DATA C 1 2 4 3 A GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED B FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS D G H • LOW Crss • SIMPLE BIAS CIRCUITS E F PIN 1 PIN 3 DRAIN GATE PIN 2 PIN 4 SOURCE SOURCE • LOW NOISE • HIGH GAIN – 16 dB MINIMUM DIM A B C D E F G H mm 26.
16 5.
72 45° 7.
11 0.
13 1.
52 0.
43 7.
67 Tol.
0.
13 0.
13 5° 0.
13 0.
02 0.
13 0.
20 REF Inches 1.
030 0.
225 45° 0.
280 0.
005 0.
55 0.
060 0.
120 Tol.
0.
015 0.
005 5° 0.
005 0.
001 0.
005 0.
008 REF APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 175 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless ...

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