Part Number
|
D1065C5 |
Manufacturer
|
Infineon |
Description
|
SiC Schottky Barrier diodes |
Published
|
Mar 23, 2021 |
Detailed Description
|
SiC
Silicon Carbide Diode
5th Generation thinQ!TM
650V SiC Schottky Diode
IDW10G65C5
Final Datasheet
Rev. 2.2, 2013-01-1...
|
Datasheet
|
D1065C5
|
Overview
SiC
Silicon Carbide Diode
5th Generation thinQ!TM
650V SiC Schottky Diode
IDW10G65C5
Final Datasheet
Rev.
2.
2, 2013-01-15
Power Management & Multimarket
5th Generation thinQ!™ SiC Schottky Diode
1
Description
ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
Thanks to the more compact design and thinwafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf).
The new thinQ!™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requireme...
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