STx11NM60N
N-channel 600 V, 0.
37 Ω, 10 A MDmesh™ II Power
MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK
Features
Type
VDSS (@TJmax)
STB11NM60N-1 STB11NM60N STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N
650 V 650 V 650 V 650 V 650 V 650 V
RDS(on) max
0.
45 Ω 0.
45 Ω 0.
45 Ω 0.
45 Ω 0.
45 Ω 0.
45 Ω
ID
10 A 10 A 10 A 10 A 10 A(1) 10 A
1.
Limited only by maximum temperature allowed
■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance
Application
■ Switching applications
Description
This series of devices is designed using the second generation of MDmesh™ technology.
This revolutionary Power
MOSFET associates a new vertical structure to the compan...