TetraFET D1203UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 D E 4 M 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 30W – 12.
5V – 500MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN F G H K I J • SUITABLE FOR BROAD BAND APPLICATIONS DRAIN GATE DM PIN 1 PIN 3 SOURCE SOURCE DIM A B C D E F G H I J K M mm 24.
76 18.
42 45° 6.
35 3.
17 Dia 5.
71 12.
7 Dia 6.
60 0.
13 4.
32 3.
17 26.
16 Tol.
0.
13 0.
13 5° 0.
13 0.
13 0.
13 0.
13 REF 0.
02 0.
13 0.
13 0.
25 PIN 2 PIN 4 Inches 0.
975 0.
725 45° 0.
25 0.
125 Dia 0.
225 0.
500 Dia 0.
260 0.
005 0.
170 0.
125 1.
03 • LOW Crss • USEFUL PO AT 1GHz • LOW NOISE • HIGH GAIN – 10 dB MINIMUM Tol.
0.
005 0.
005 5° 0.
005 0.
005 0.
005 0.
005 REF 0.
001 0.
005 ...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)